Tag: Transistors
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Insulated Gate Bipolar Transistor (IGBT) – Structure, Operation & Applications
IGBT is a voltage controlled device. It has high input impedance like a MOSFET and low on-state conduction losses like a BJT. In other words, this power device combines the voltage control of the MOSFET gate with the superior conduction characteristics of the bipolar device. Nonetheless, the IGBT utilizes injected-charge modulation in the base region…
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Unijunction Transistor Features and Operation
The unijunction transistor (UJT) is a three terminal, single-junction device which exhibits negative resistance and switching characteristics totally unlike those of conventional bipolar transistors. The UJT consists of a bar of n-type having ohmic contacts designated Base 1 (B1) and Base 2 (B2) on either side of a single PN junction designated the emitter. An…
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Bipolar Junction Transistors (BJT)
By placing two PN junctions together we can create a bipolar junction transistor. In a PNP transistor the majority charger carriers are holes and typically germanium is favored for these devices. In NPN transistors the majority charger carriers are electrons; for this case, silicon is typically used. The thin and lightly doped central region is…