Features of a Gunn Diode
A gunn diode is made up of only N-type semiconductor which is typically sandwiched between two metal conductors. The central section is usually lightly doped N– surrounded by heavily doped N+ layers. The … Read more
Tag: Semiconductor Devices
Schottky Diode – Features & Applications
Schottky diode is fabricated as a metal-to-N junction rather than a P-N semiconductor junction. Also referred to as hot-carrier diodes, Schottky diodes are characterized by fast switching times (low reverse-recovery time), low forward voltage drop (normally 0.25 to 0.4 … Read more
The Shockley Diode Features & Operation
Unijunction Transistor Features and Operation
The unijunction transistor (UJT) is a three terminal, single-junction device which exhibits negative resistance and switching characteristics totally unlike those of conventional bipolar transistors.
The UJT consists of a bar of n-type having ohmic contacts designated Base 1 (B… Read more
The Junction Field Effect Transistors (JFET)
The bipolar transistor has several disadvantages: it has low input impedance because of forward biased emitter junction, it has small high-frequency gain, it has considerable noise level and it is non-linear when |VCE| < 2V. Although low input … Read more