Tag: Schottky diode

Schottky diode is fabricated as a metal-to-N junction rather than a P-N semiconductor junction. Also referred to as hot-carrier diodes, Schottky diodes are characterized by fast switching times (low reverse-recovery time), low forward voltage drop (normally 0.25 to 0.4 volts for a metal-silicon junction), and low junction capacitance. The forward voltage drop (VF), reverse-recovery time…