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  • The Principle and Application of IMPATT Diode

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    by

    John Mulindi
    in

    The Impact Avalanche Transit Time (IMPATT) diode is a high power radio frequency (RF) generator that operates from 3 to 100 GHz. IMPATT diodes are manufactured from silicon, gallium arsenide or silicon carbide. An IMPATT diode is reverse biased above the breakdown voltage. The high doping levels produce a thin depletion region. The arising high…