Metal Oxide Semiconductor FET (MOSFET)

The Metal oxide semiconductor FET (MOSFET) also known as the insulated-gate FET (IGFET) is similar to JFET but exhibits even larger resistive input impedance due to the thin layer of silicon dioxide that is used to insulate the gate from … Read more

The Junction Field Effect Transistors (JFET)

The bipolar transistor has several disadvantages: it has low input impedance because of forward biased emitter junction, it has small high-frequency gain, it has considerable noise level and it is non-linear when |VCE| < 2V. Although low input … Read more

Bipolar Junction Transistors (BJT)

By placing two PN junctions together we can create a bipolar junction transistor. In a PNP transistor the majority charger carriers are holes and typically germanium is favored for these devices. In NPN transistors the majority charger carriers are electrons; … Read more

The Basic Principle of Operation of an Oscillator

An oscillator is the basic element of ac signal sources and generates sinusoidal signals of known frequency and amplitude.

The main applications of oscillators are as sinusoidal waveform sources in electronic measurements. Oscillators can generate a wide range of frequencies … Read more